Epistar and Azzurro have jointly made breakthroughs on developing GaN-on-silicon based LEDs utilising Epistar’s HB LED structures and Azzurro’s technology for 150mm GaN-on-silicon in just 4 months.

The firms transferred Epistar’s existing LED structures built on sapphire to the GaN-on-silicon material system, marking GaN-on-silicon one step further towards implementation in mass production.

GaN-on-silicon growth is often associated with many technological challenges. But the use of templates with unique straina€engineering technology from Azzurro enables epitaxy engineers to quickly transfer their LED structures to GaN-on-silicon.

In addition, the patented and proprietary buffer stress management enables as little as 4nm wavelength homogeneity. This helps to reduce binning and increase the yield of LED epiwafers.